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مشاهده نسخه کامل : Intel Core 2 Extreme QX9650



Trance
19-02-08, 22:48
مشخصات و عملرد این سی پی یو .

Intel "Penryn" processors incorporate 410 million transistors for each dual core chip,
and 820 million for each quad core chip. The original Intel Pentium Processor only
has 3.1 million transistors.
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تعداد تز انزیستور های بکار رفته در این سی پی یو .

Penryn”, manufactured on a 45nm نا م هسته و تکنولوزی 45 نا نومتری این پرد ازنده.

new SSE4 instructions دستور عمل جدید در این پر دازنده.

و اطلاعات جدید تر از این پردازنده شرکت اینتل .اساتید محترم بیشتر می تونن راجع به عملکرد این پردازنده توضیح بدن و بهتر تر جمه کنن.با سپاس


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K A S R A
20-02-08, 01:18
و اطلاعات جدید تر از این پردازنده شرکت اینتل .اساتید محترم بیشتر می تونن راجع به عملکرد این پردازنده توضیح بدن و بهتر تر جمه کنن.با سپاس


Only the registered members can see the link (Only the registered members can see the link)

سلام دوست عزیز ... مرسی از خبر های متنوع و خواندنی شما :merci: . آقا لینکی که واسه این خبر آخرت گذاشتیو من کلیک کردم می خواستم مقاله کامل ترجمه کنم ولی از مقاله Intel خبری نبود ... فکر کنم لینک و باید عوضش کنید . :lol:

Labyrinth
20-02-08, 04:13
روی این کلیک کن ( ورود به سایت (Only the registered members can see the link) )

Labyrinth
25-02-08, 08:30
Introduction
Intel has once again re-energized the overclocking community with the recent release of the Core 2 Extreme QX9650 quad-core processor, the first of many new mobile, desktop, and server CPUs fabricated using their radically new 45nm process technology. Early results have highlighted Intel's extremely conservative approach in assigning processor power specifications and because of this, users looking to push their systems beyond rated speeds are finding they have a lot more headroom than normally expected. Our overclocking trials have met with great success, as exploiting this processor's hidden performance margin is easier than ever imagined.
The last seven generations of Intel processors have utilized traditional metal oxide semiconductor (MOS) materials, namely silicon dioxide (SiO2) and other polysilicates. This has spanned a period starting with the Pentium, originally built on 0.6 micron (600nm) node technology, all the way to Core 2 Duo/Quad parts built on 65nm. However, for the first time in over 40 years, Intel has significantly changed some of the basic components used in transistor fabrication. Hafnium dioxide (HfO2) has replaced SiO2 as the gate dielectric material, along with other carefully chosen new metals, for use in the formation of gate electrodes in both PMOS and NMOS transistors. These new materials, along with the right process recipe, have cut gate leakage by a factor of more than 10x while simultaneously delivering an astonishing 30% decrease in transistor switching energy. The result is a cooler running, more energy efficient, and high-performance processing powerhouse

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برای مشاهده بررسی اینجا کلیک کنید
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